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QSB363GR

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
QSB363 is suitable for industrial and consumer electronics applications, particularly in infrared sensing and detection systems. Its compact design and wide beam angle make it ideal for use in remote controls, optical switches, and various automation systems.
Specification
Specification
SENSOR PHOTO 940NM TOP VIEW 2SMD
SENSOR PHOTO 940NM TOP VIEW 2SMD
Detailed specification
Detailed specification
Phototransistors 940nm Top View 2-SMD, Gull Wing
Phototransistors 940nm Top View 2-SMD, Gull Wing
Description
Description
The QSB363 is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. This NPN device operates within a temperature range of -40 to +85 °C and offers a collector-emitter breakdown voltage of 30 V.
The QSB363 is a silicon phototransistor designed for infrared applications, featuring a peak sensitivity wavelength of 940 nm. It is housed in a T−3/4 (2 mm) surface mount package with a medium wide beam angle of 24°. This NPN device operates within a temperature range of -40 to +85 °C and offers a collector-emitter breakdown voltage of 30 V.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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