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QEB363

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
QEB363 is designed for use in industrial and consumer electronics applications, particularly in remote control systems, optical communication, and sensing applications. Its high radiant intensity and narrow emission angle make it ideal for precise infrared signaling and detection.
Specification
Specification
EMITTER IR 940NM 50MA AXIAL
EMITTER IR 940NM 50MA AXIAL
Detailed specification
Detailed specification
Infrared (IR) Emitter 940nm 1.6V 50mA 8mW/sr @ 100mA 24° Axial
Infrared (IR) Emitter 940nm 1.6V 50mA 8mW/sr @ 100mA 24° Axial
Description
Description
The QEB363 is a subminiature plastic infrared emitting diode with a peak emission wavelength of 940 nm. It operates at a forward current of 50 mA and features a narrow emission angle of 24°. The device has a forward voltage of 1.6 V and a radiant intensity of 8 mW/sr at 100 mA, making it suitable for various infrared applications.
The QEB363 is a subminiature plastic infrared emitting diode with a peak emission wavelength of 940 nm. It operates at a forward current of 50 mA and features a narrow emission angle of 24°. The device has a forward voltage of 1.6 V and a radiant intensity of 8 mW/sr at 100 mA, making it suitable for various infrared applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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