PZTA42
Manufacturer
DIOTEC
Data sheet
Data sheet
Specification
Specification
BJT SOT223 300V 500MA NPN 1.5W
BJT SOT223 300V 500MA NPN 1.5W
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 1.5 W surface-mounted SOT-223
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 1.5 W surface-mounted SOT-223
Description
Description
The PZTA42 is a high voltage NPN bipolar junction transistor (BJT) in a SOT-223 package, rated for a collector-emitter voltage (VCEO) of 300 V and a collector current (IC) of 500 mA. It features a power dissipation of 1.5 W and a gain-bandwidth product of over 50 MHz, making it suitable for signal processing, switching, and amplification applications. The maximum junction temperature is 150°C, and it complies with RoHS standards.
The PZTA42 is a high voltage NPN bipolar junction transistor (BJT) in a SOT-223 package, rated for a collector-emitter voltage (VCEO) of 300 V and a collector current (IC) of 500 mA. It features a power dissipation of 1.5 W and a gain-bandwidth product of over 50 MHz, making it suitable for signal processing, switching, and amplification applications. The maximum junction temperature is 150°C, and it complies with RoHS standards.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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