PZT751T1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 2A SOT223
TRANS PNP 60V 2A SOT223
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 2 A 75MHz 800 mW Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor PNP 60 V 2 A 75MHz 800 mW Surface Mount SOT-223 (TO-261)
Description
Description
The PZT751T1G is a PNP bipolar junction transistor designed for medium power applications. It features a collector-emitter voltage of -60 V, a collector current of -2 A, and a power dissipation of 800 mW. The device operates at a frequency of 75 MHz and is housed in a SOT-223 package, suitable for surface mount technology.
The PZT751T1G is a PNP bipolar junction transistor designed for medium power applications. It features a collector-emitter voltage of -60 V, a collector current of -2 A, and a power dissipation of 800 mW. The device operates at a frequency of 75 MHz and is housed in a SOT-223 package, suitable for surface mount technology.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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