PZT651T1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 2A SOT223
TRANS NPN 60V 2A SOT223
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 2 A 75 MHz 800 mW surface-mounted SOT-223 (TO-261)
Bipolar (BJT) Transistor NPN 60 V 2 A 75 MHz 800 mW surface-mounted SOT-223 (TO-261)
Description
Description
The PZT651T1G is an NPN silicon planar epitaxial transistor designed for medium power applications. It features a collector-emitter voltage of 60 V, a collector current of 2 A, and a total power dissipation of 800 mW. Housed in a SOT-223 package, it offers improved thermal conduction and is suitable for wave or reflow soldering.
The PZT651T1G is an NPN silicon planar epitaxial transistor designed for medium power applications. It features a collector-emitter voltage of 60 V, a collector current of 2 A, and a total power dissipation of 800 mW. Housed in a SOT-223 package, it offers improved thermal conduction and is suitable for wave or reflow soldering.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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