PZT2907AT1G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.6A SOT223
TRANS PNP 60V 0.6A SOT223
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 1.5 W Surface Mount SOT-223 (TO-261)
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 1.5 W Surface Mount SOT-223 (TO-261)
Description
Description
The PZT2907AT1G is a PNP silicon epitaxial transistor designed for linear and switching applications. It features a collector-emitter voltage of 60 V, a continuous collector current of 600 mA, and a power dissipation of 1.5 W. Housed in a SOT-223 package, it supports medium power surface mount applications with improved thermal conduction.
The PZT2907AT1G is a PNP silicon epitaxial transistor designed for linear and switching applications. It features a collector-emitter voltage of 60 V, a continuous collector current of 600 mA, and a power dissipation of 1.5 W. Housed in a SOT-223 package, it supports medium power surface mount applications with improved thermal conduction.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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