PN2222ATA
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 40V 1A TO92-3
TRANS NPN 40V 1A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Through Hole TO-92-3
Description
Description
The PN2222ATA is a general-purpose NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 40 V, a collector current (IC) of 1 A, and a maximum power dissipation of 625 mW. With a current gain bandwidth product of 300 MHz, it operates effectively in various electronic circuits, making it suitable for a wide range of applications.
The PN2222ATA is a general-purpose NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 40 V, a collector current (IC) of 1 A, and a maximum power dissipation of 625 mW. With a current gain bandwidth product of 300 MHz, it operates effectively in various electronic circuits, making it suitable for a wide range of applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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