PHE13007,127
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
TRANS NPN 400V 8A TO220AB
TRANS NPN 400V 8A TO220AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB
Bipolar (BJT) Transistor NPN 400 V 8 A 80 W Through Hole TO-220AB
Description
Description
The PHE13007 is a silicon NPN power switching transistor designed for high-frequency applications. It features a collector-emitter voltage of 400 V, a collector current of 8 A, and a total power dissipation of 80 W. Housed in a TO-220AB package, it is suitable for use in electronic lighting ballasts, converters, inverters, and motor control systems.
The PHE13007 is a silicon NPN power switching transistor designed for high-frequency applications. It features a collector-emitter voltage of 400 V, a collector current of 8 A, and a total power dissipation of 80 W. Housed in a TO-220AB package, it is suitable for use in electronic lighting ballasts, converters, inverters, and motor control systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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