logo

PD85035TR-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD85035TR-E is suitable for RF power amplification in commercial and industrial applications, particularly in telecommunications and automotive sectors. Its high gain and linearity make it ideal for mobile radio systems, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 13.6V PWRSO-10RF
RF MOSFET LDMOS 13.6V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W surface-mounted PowerSO-10RF (Formed Lead)
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W surface-mounted PowerSO-10RF (Formed Lead)
Description
Description
The PD85035TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with 14.9 dB gain at 870 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD85035TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with 14.9 dB gain at 870 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.
Richard Mattsson
Upload BOM
Do you want to upload an entire BOM and get a ready-made quote within a few hours? Our salespeople will immediately take care of your request and get back to you.