PD85035TR-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 13.6V PWRSO-10RF
RF MOSFET LDMOS 13.6V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W surface-mounted PowerSO-10RF (Formed Lead)
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W surface-mounted PowerSO-10RF (Formed Lead)
Description
Description
The PD85035TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with 14.9 dB gain at 870 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD85035TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with 14.9 dB gain at 870 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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