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PD85035S-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD85035S-E is ideal for RF power applications in commercial and industrial sectors, particularly in mobile radio systems. Its high gain and efficiency at 870 MHz make it suitable for telecommunications and broadcasting, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 13.6V PWRSO-10RF
RF MOSFET LDMOS 13.6V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W PowerSO-10RF (Straight Lead)
RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W PowerSO-10RF (Straight Lead)
Description
Description
The PD85035S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with a gain of 15-17 dB at 870 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial RF applications.
The PD85035S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 13.6 V, it delivers up to 35 W output power with a gain of 15-17 dB at 870 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial RF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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