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PD57060-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD57060-E is ideal for RF power applications in telecommunications, particularly in base stations. Its high gain and efficiency at 945 MHz make it suitable for commercial and industrial use, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 28V POWERSO10
RF MOSFET LDMOS 28V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 28 V 100 mA 945MHz 14.3dB 60W 10-PowerSO
RF Mosfet 28 V 100 mA 945MHz 14.3dB 60W 10-PowerSO
Description
Description
The PD57060-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broad band applications. Operating at 28 V, it delivers 60 W output power with a gain of 14.3 dB at 945 MHz. Its PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for base station applications.
The PD57060-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broad band applications. Operating at 28 V, it delivers 60 W output power with a gain of 14.3 dB at 945 MHz. Its PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for base station applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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