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PD57045-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD57045-E is suitable for RF power applications in commercial and industrial sectors, particularly in base station transmitters. Its high gain and linearity make it ideal for use in telecommunications, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 28V POWERSO10
RF MOSFET LDMOS 28V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 28 V 250 mA 945MHz 14.5dB 45W 10-PowerSO
RF Mosfet 28 V 250 mA 945MHz 14.5dB 45W 10-PowerSO
Description
Description
The PD57045-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 45 W output power with 14.5 dB gain at 945 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
The PD57045-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 45 W output power with 14.5 dB gain at 945 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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