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PD57030S-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD57030S-E is ideal for RF power applications in telecommunications, particularly in base stations. Its high gain and linearity make it suitable for commercial and industrial use, operating efficiently at frequencies up to 1 GHz. The device's robust design ensures reliability in demanding environments.
Specification
Specification
RF MOSFET LDMOS 28V POWERSO-10RF
RF MOSFET LDMOS 28V POWERSO-10RF
Detailed specification
Detailed specification
RF Mosfet 28 V 50 mA 945MHz 14dB 30W surface-mounted PowerSO-10RF (Straight Lead)
RF Mosfet 28 V 50 mA 945MHz 14dB 30W surface-mounted PowerSO-10RF (Straight Lead)
Description
Description
The PD57030S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 30 W output power with 14 dB gain at 945 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for base station applications.
The PD57030S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 30 W output power with 14 dB gain at 945 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for base station applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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