PD57030-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 28V POWERSO10
RF MOSFET LDMOS 28V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 28 V 50 mA 945MHz 14dB 30W 10-PowerSO
RF Mosfet 28 V 50 mA 945MHz 14dB 30W 10-PowerSO
Description
Description
The PD57030-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 30 W output power with 14 dB gain at 945 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
The PD57030-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 30 W output power with 14 dB gain at 945 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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