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PD57018TR-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD57018TR-E is suitable for RF power applications in telecommunications and industrial sectors. Its high gain and efficiency make it ideal for base station transmitters and other RF amplification needs, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 28V POWERSO-10RF
RF MOSFET LDMOS 28V POWERSO-10RF
Detailed specification
Detailed specification
RF Mosfet 28 V 100 mA 945MHz 16.5dB 18W PowerSO-10RF (Formed Lead)
RF Mosfet 28 V 100 mA 945MHz 16.5dB 18W PowerSO-10RF (Formed Lead)
Description
Description
The PD57018TR-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broad band applications. Operating at 28V, it delivers 18W output power with 16.5dB gain at 945MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD57018TR-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broad band applications. Operating at 28V, it delivers 18W output power with 16.5dB gain at 945MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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