PD57018-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 28V POWERSO10
RF MOSFET LDMOS 28V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 28 V 100 mA 945MHz 16.5dB 18W 10-PowerSO
RF Mosfet 28 V 100 mA 945MHz 16.5dB 18W 10-PowerSO
Description
Description
The PD57018-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 18 W output power with 16.5 dB gain at 945 MHz. The device features excellent thermal stability and reliability, making it suitable for base station applications.
The PD57018-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. Operating at 28 V, it delivers 18 W output power with 16.5 dB gain at 945 MHz. The device features excellent thermal stability and reliability, making it suitable for base station applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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