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PD55025TR-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD55025TR-E is suitable for RF power applications in commercial and industrial domains, particularly in mobile radio systems. Its high gain and linearity make it ideal for use in automotive and telecommunications equipment, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 12.5V PWRSO-10RF
RF MOSFET LDMOS 12.5V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 12.5 V 200 mA 500MHz 14.5dB 25W PowerSO-10RF (Formed Lead)
RF Mosfet 12.5 V 200 mA 500MHz 14.5dB 25W PowerSO-10RF (Formed Lead)
Description
Description
The PD55025TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 25 W output power with a gain of 14.5 dB at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD55025TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 25 W output power with a gain of 14.5 dB at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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