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PD55015S-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD55015S-E is ideal for RF power applications in commercial and industrial sectors, particularly in mobile radio systems. Its high gain and efficiency at 500 MHz make it suitable for telecommunications and automotive applications, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 12.5V PWRSO-10RF
RF MOSFET LDMOS 12.5V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W surface-mounted PowerSO-10RF (Straight Lead)
RF Mosfet 12.5 V 150 mA 500MHz 14dB 15W surface-mounted PowerSO-10RF (Straight Lead)
Description
Description
The PD55015S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 15 W output power with 14 dB gain at 500 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
The PD55015S-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 15 W output power with 14 dB gain at 500 MHz. The PowerSO-10RF package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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