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PD55008TR-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD55008TR-E is suitable for RF power applications in commercial and industrial sectors, particularly in telecommunications and automotive systems. Its high gain and efficiency make it ideal for mobile radio and other RF communication devices, ensuring reliable performance in demanding environments.
Specification
Specification
RF MOSFET LDMOS 12.5V PWRSO-10RF
RF MOSFET LDMOS 12.5V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 12.5 V 150 mA 500MHz 17dB 8W PowerSO-10RF (Formed Lead)
RF Mosfet 12.5 V 150 mA 500MHz 17dB 8W PowerSO-10RF (Formed Lead)
Description
Description
The PD55008TR-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broadband applications. It operates at 12.5 V with a maximum output power of 8 W and a gain of 17 dB at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD55008TR-E is an N-channel enhancement-mode RF MOSFET designed for high gain and broadband applications. It operates at 12.5 V with a maximum output power of 8 W and a gain of 17 dB at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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