PD55008-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 12.5V POWERSO10
RF MOSFET LDMOS 12.5V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 12.5 V 150 mA 500MHz 17dB 8W 10-PowerSO
RF Mosfet 12.5 V 150 mA 500MHz 17dB 8W 10-PowerSO
Description
Description
The PD55008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 8 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD55008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. It operates at 12.5 V, delivering 8 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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