PD55003L-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 12.5V POWERFLAT
RF MOSFET LDMOS 12.5V POWERFLAT
Detailed specification
Detailed specification
RF Mosfet 12.5 V 50 mA 500MHz 19dB 3W PowerFLAT™ (5x5)
RF Mosfet 12.5 V 50 mA 500MHz 19dB 3W PowerFLAT™ (5x5)
Description
Description
The PD55003L-E is an N-channel enhancement-mode RF power transistor designed for high gain and broadband applications. Operating at 12.5 V, it delivers 3 W output power with 19 dB gain at 500 MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
The PD55003L-E is an N-channel enhancement-mode RF power transistor designed for high gain and broadband applications. Operating at 12.5 V, it delivers 3 W output power with 19 dB gain at 500 MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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