PD55003-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 12.5V POWERSO10
RF MOSFET LDMOS 12.5V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 12.5 V 50 mA 500MHz 17dB 3W 10-PowerSO
RF Mosfet 12.5 V 50 mA 500MHz 17dB 3W 10-PowerSO
Description
Description
The PD55003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 3 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and reliability, optimized for RF performance in a PowerSO-10RF package.
The PD55003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 12.5 V, delivering 3 W output power with 17 dB gain at 500 MHz. The device features excellent thermal stability and reliability, optimized for RF performance in a PowerSO-10RF package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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