PD54008TR-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 7.5V PWRSO-10RF
RF MOSFET LDMOS 7.5V PWRSO-10RF
Detailed specification
Detailed specification
RF Mosfet 7.5 V 150 mA 500MHz 11.5dB 8W PowerSO-10RF (Formed Lead)
RF Mosfet 7.5 V 150 mA 500MHz 11.5dB 8W PowerSO-10RF (Formed Lead)
Description
Description
The PD54008TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 7.5 V, delivering 8 W output power with 11.5 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
The PD54008TR-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 7.5 V, delivering 8 W output power with 11.5 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Richard or one of our other skilled sales representatives. They'll help you find the right service option.C