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PD54008L-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD54008L-E is ideal for RF power applications in commercial and industrial domains, particularly in portable radio systems. Its high gain and broadband performance make it suitable for use in telecommunications and other RF applications requiring reliable power amplification.
Specification
Specification
RF MOSFET LDMOS 7.5V POWERFLAT
RF MOSFET LDMOS 7.5V POWERFLAT
Detailed specification
Detailed specification
RF Mosfet 7.5 V 200 mA 500MHz 15dB 8W PowerFLAT™ (5x5)
RF Mosfet 7.5 V 200 mA 500MHz 15dB 8W PowerFLAT™ (5x5)
Description
Description
The PD54008L-E is an N-Channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 7.5V, it delivers 8W output power with 15dB gain at 500MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
The PD54008L-E is an N-Channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 7.5V, it delivers 8W output power with 15dB gain at 500MHz. Its innovative PowerFLAT™ package ensures excellent thermal stability and reliability, making it suitable for commercial and industrial use.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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