PD54008-E
Manufacturer
ST MICROELECTRONICS
Data sheet
Data sheet
Specification
Specification
RF MOSFET LDMOS 7.5V POWERSO10
RF MOSFET LDMOS 7.5V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 7.5 V 150 mA 500MHz 11.5dB 8W 10-PowerSO
RF Mosfet 7.5 V 150 mA 500MHz 11.5dB 8W 10-PowerSO
Description
Description
The PD54008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 7.5 V, delivering 8 W output power with 11.5 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
The PD54008-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broad band applications. It operates at 7.5 V, delivering 8 W output power with 11.5 dB gain at 500 MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package optimized for RF performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Petra or one of our other skilled sales representatives. They'll help you find the right service option.C