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PD54003-E

Manufacturer

ST MICROELECTRONICS

data-sheet
Data sheet
Data sheet
PD54003-E is suitable for RF power amplification in commercial and industrial applications, particularly in portable radios and communication systems. Its high gain and linearity make it ideal for use in devices requiring efficient RF performance at frequencies up to 1 GHz.
Specification
Specification
RF MOSFET LDMOS 7.5V POWERSO10
RF MOSFET LDMOS 7.5V POWERSO10
Detailed specification
Detailed specification
RF Mosfet 7.5 V 50 mA 500MHz 12dB 3W 10-PowerSO
RF Mosfet 7.5 V 50 mA 500MHz 12dB 3W 10-PowerSO
Description
Description
The PD54003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 7.5V, it delivers 3W output power with 12dB gain at 500MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance and assembly.
The PD54003-E is an N-channel enhancement-mode LDMOS RF power transistor designed for high gain and broadband applications. Operating at 7.5V, it delivers 3W output power with 12dB gain at 500MHz. The device features excellent thermal stability and is housed in a PowerSO-10RF package, optimized for RF performance and assembly.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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