PBSS5630PA,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 30V 6A 3HUSON
TRANS PNP 30V 6A 3HUSON
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 30 V 6 A 80MHz 2.1 W Surface Mount 3-HUSON (2x2)
Bipolar (BJT) Transistor PNP 30 V 6 A 80MHz 2.1 W Surface Mount 3-HUSON (2x2)
Description
Description
The PBSS5630PA is a PNP low VCEsat (BISS) transistor designed for medium power applications. It features a collector-emitter voltage of -30 V, a collector current of -6 A, and a transition frequency of 80 MHz. The device is housed in a compact 3-HUSON (2x2) surface-mounted package, providing excellent thermal and electrical conductivity with low RCEsat of 39 mΩ at 6 A. It is suitable for load switching, battery-driven devices, and power management applications.
The PBSS5630PA is a PNP low VCEsat (BISS) transistor designed for medium power applications. It features a collector-emitter voltage of -30 V, a collector current of -6 A, and a transition frequency of 80 MHz. The device is housed in a compact 3-HUSON (2x2) surface-mounted package, providing excellent thermal and electrical conductivity with low RCEsat of 39 mΩ at 6 A. It is suitable for load switching, battery-driven devices, and power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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