PBSS5320D,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA PBSS5320D - SMALL SIGNA
NEXPERIA PBSS5320D - SMALL SIGNA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 20 V 3 A 100MHz 750 mW surface-mounted 6-TSOP
Bipolar (BJT) Transistor PNP 20 V 3 A 100MHz 750 mW surface-mounted 6-TSOP
Description
Description
The NXP Semiconductors PBSS5320D is a low VCEsat PNP bipolar transistor designed for high current applications. It features a maximum collector-emitter voltage of -20 V, a collector current rating of -3 A, and a transition frequency of 100 MHz. The device is housed in a compact SOT457 (SC-74) surface mount package, providing efficient thermal performance with a total power dissipation of up to 750 mW. Its low saturation voltage and high reliability make it suitable for various applications.
The NXP Semiconductors PBSS5320D is a low VCEsat PNP bipolar transistor designed for high current applications. It features a maximum collector-emitter voltage of -20 V, a collector current rating of -3 A, and a transition frequency of 100 MHz. The device is housed in a compact SOT457 (SC-74) surface mount package, providing efficient thermal performance with a total power dissipation of up to 750 mW. Its low saturation voltage and high reliability make it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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