PBSS5112PAP,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS 2PNP 120V 1A 6HUSON
TRANS 2PNP 120V 1A 6HUSON
Detailed specification
Detailed specification
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 1A 100MHz 510mW Surface Mount 6-HUSON (2x2)
Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 1A 100MHz 510mW Surface Mount 6-HUSON (2x2)
Description
Description
The PBSS5112PAP is a dual PNP bipolar transistor array designed for low VCEsat applications. It operates at a maximum collector-emitter voltage of 120V and a collector current of 1A, with a transition frequency of 100MHz. This surface-mounted device features a compact DFN2020-6 package, providing high energy efficiency and reduced PCB requirements.
The PBSS5112PAP is a dual PNP bipolar transistor array designed for low VCEsat applications. It operates at a maximum collector-emitter voltage of 120V and a collector current of 1A, with a transition frequency of 100MHz. This surface-mounted device features a compact DFN2020-6 package, providing high energy efficiency and reduced PCB requirements.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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