PBSS4260QAZ
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NOW NEXPERIA PBSS4260QA - SMALL
NOW NEXPERIA PBSS4260QA - SMALL
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 2 A 180 MHz 325 mW surface-mounted DFN1010D-3
Bipolar (BJT) Transistor NPN 60 V 2 A 180 MHz 325 mW surface-mounted DFN1010D-3
Description
Description
The NXP Semiconductors PBSS4260QAZ is a small NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates at a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 2 A, making it suitable for various power management tasks. With a transition frequency of 180 MHz and a power dissipation of 325 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a DFN1010D-3 format, it ensures efficient thermal performance and space-saving integration in electronic systems.
The NXP Semiconductors PBSS4260QAZ is a small NPN bipolar junction transistor (BJT) designed for high-frequency applications. It operates at a maximum collector-emitter voltage of 60 V and can handle a collector current of up to 2 A, making it suitable for various power management tasks. With a transition frequency of 180 MHz and a power dissipation of 325 mW, this surface-mounted device is ideal for compact circuit designs. Packaged in a DFN1010D-3 format, it ensures efficient thermal performance and space-saving integration in electronic systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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