PBSS4230QAZ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 30V 2A DFN1010D-3
TRANS NPN 30V 2A DFN1010D-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW surface-mounted DFN1010D-3
Bipolar (BJT) Transistor NPN 30 V 2 A 190 MHz 325 mW surface-mounted DFN1010D-3
Description
Description
The PBSS4230QAZ is a low VCEsat NPN bipolar transistor designed for high efficiency applications. It operates at a collector-emitter voltage of 30 V and supports a collector current of up to 2 A, with a peak current of 3 A. The device features a DFN1010D-3 surface mount package, providing reduced PCB area and enhanced thermal performance. It is suitable for load switching, battery-driven devices, and power management circuits.
The PBSS4230QAZ is a low VCEsat NPN bipolar transistor designed for high efficiency applications. It operates at a collector-emitter voltage of 30 V and supports a collector current of up to 2 A, with a peak current of 3 A. The device features a DFN1010D-3 surface mount package, providing reduced PCB area and enhanced thermal performance. It is suitable for load switching, battery-driven devices, and power management circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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