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PBSS304PD,115

Manufacturer

NXP

data-sheet
Data sheet
Data sheet
The NXP Semiconductors PBSS304PD is utilized in high-voltage applications such as DC-to-DC conversion, MOSFET gate driving, motor control, and power switching. Its low VCEsat and high current gain make it ideal for automotive and industrial applications requiring efficient power management.
Specification
Specification
NEXPERIA PBSS304PD - SMALL SIGNA
NEXPERIA PBSS304PD - SMALL SIGNA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 80 V 1 A 110MHz 1.1 W surface-mounted 6-TSOP
Bipolar (BJT) Transistor PNP 80 V 1 A 110MHz 1.1 W surface-mounted 6-TSOP
Description
Description
The NXP Semiconductors PBSS304PD is a PNP low VCEsat (BISS) transistor designed for small signal applications. It features a collector-emitter voltage of 80 V, a collector current of 3 A, and a power dissipation of 1.1 W. This surface-mounted device (SMD) operates at frequencies up to 110 MHz, making it suitable for high-voltage DC-to-DC conversion and motor control applications.
The NXP Semiconductors PBSS304PD is a PNP low VCEsat (BISS) transistor designed for small signal applications. It features a collector-emitter voltage of 80 V, a collector current of 3 A, and a power dissipation of 1.1 W. This surface-mounted device (SMD) operates at frequencies up to 110 MHz, making it suitable for high-voltage DC-to-DC conversion and motor control applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
PBSS304PD,115 is also available from the following manufacturers
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