PBSS301ND,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
NEXPERIA PBSS301ND - SMALL SIGNA
NEXPERIA PBSS301ND - SMALL SIGNA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 20 V 4 A 100MHz 1.1 W surface-mounted 6-TSOP
Bipolar (BJT) Transistor NPN 20 V 4 A 100MHz 1.1 W surface-mounted 6-TSOP
Description
Description
The Nexperia PBSS301ND is a low VCEsat NPN bipolar transistor designed for small signal applications. It features a collector-emitter voltage of 20 V, a continuous collector current of 4 A, and a peak current capability of 15 A. With a collector-emitter saturation resistance (RCEsat) of 50 to 70 mΩ, it ensures high efficiency and minimal heat generation, making it suitable for power management, charging circuits, and MOSFET gate driving.
The Nexperia PBSS301ND is a low VCEsat NPN bipolar transistor designed for small signal applications. It features a collector-emitter voltage of 20 V, a continuous collector current of 4 A, and a peak current capability of 15 A. With a collector-emitter saturation resistance (RCEsat) of 50 to 70 mΩ, it ensures high efficiency and minimal heat generation, making it suitable for power management, charging circuits, and MOSFET gate driving.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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