PBSS2515M,315
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 15V 0.5A SOT883
TRANS NPN 15V 0.5A SOT883
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 15 V 500 mA 420 MHz 430 mW surface-mounted SOT-883
Bipolar (BJT) Transistor NPN 15 V 500 mA 420 MHz 430 mW surface-mounted SOT-883
Description
Description
The PBSS2515M is a low VCEsat NPN bipolar transistor designed for applications requiring high efficiency and low heat generation. It operates at a collector-emitter voltage of 15 V and supports a continuous collector current of 500 mA, with a peak current capability of 1 A. The device features a low collector-emitter saturation voltage (VCEsat) and is housed in a compact SOT-883 surface mount package, making it suitable for space-constrained designs.
The PBSS2515M is a low VCEsat NPN bipolar transistor designed for applications requiring high efficiency and low heat generation. It operates at a collector-emitter voltage of 15 V and supports a continuous collector current of 500 mA, with a peak current capability of 1 A. The device features a low collector-emitter saturation voltage (VCEsat) and is housed in a compact SOT-883 surface mount package, making it suitable for space-constrained designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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