PBRP113ET,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS PNP 40V TO236AB
TRANS PREBIAS PNP 40V TO236AB
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Description
Description
The PBRP113ET is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. This device features built-in bias resistors, low VCEsat, and high current gain, making it ideal for reducing component count and simplifying circuit design.
The PBRP113ET is a pre-biased PNP bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage of 40 V and supports an output current of 600 mA. This device features built-in bias resistors, low VCEsat, and high current gain, making it ideal for reducing component count and simplifying circuit design.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C