PBRN113ZT-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS NPN 40V TO236AB
TRANS PREBIAS NPN 40V TO236AB
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Description
Description
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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