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PBRN113ZT-QR

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
PBRN113ZT-Q is suitable for automotive and industrial applications, particularly in digital circuits, load switching, and medium current peripheral driving. Its low VCEsat and high current gain make it ideal for reducing component count and simplifying designs in these domains.
Specification
Specification
TRANS PREBIAS NPN 40V TO236AB
TRANS PREBIAS NPN 40V TO236AB
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW surface-mounted TO-236AB
Description
Description
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
The PBRN113ZT-Q is a pre-biased NPN bipolar transistor designed for surface mount applications. It operates at a collector-emitter voltage (VCEO) of 40 V, with a maximum output current of 600 mA and power dissipation of 250 mW. The device features built-in bias resistors, simplifying circuit design and reducing component count.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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