PBLS4002Y-QX
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
PBLS4002Y-Q/SOT363/SC-88
PBLS4002Y-Q/SOT363/SC-88
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 40V, 50V 500mA, 100mA 300MHz 200mW surface-mounted 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 40V, 50V 500mA, 100mA 300MHz 200mW surface-mounted 6-TSSOP
Description
Description
The PBLS4002Y-Q is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a compact SOT363 (SC-88) surface-mounted package. It supports a collector-emitter voltage of 40V for PNP and 50V for NPN, with a maximum collector current of 500mA and 100mA respectively. The device operates at a transition frequency of 300MHz and has a total power dissipation of 200mW, making it suitable for low drive power applications.
The PBLS4002Y-Q is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a compact SOT363 (SC-88) surface-mounted package. It supports a collector-emitter voltage of 40V for PNP and 50V for NPN, with a maximum collector current of 500mA and 100mA respectively. The device operates at a transition frequency of 300MHz and has a total power dissipation of 200mW, making it suitable for low drive power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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