PBLS4002Y,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS 1NPN 1PNP 6TSSOP
TRANS PREBIAS 1NPN 1PNP 6TSSOP
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW surface-mounted 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW surface-mounted 6-TSSOP
Description
Description
The PBLS4002Y,115 is a pre-biased bipolar transistor (BJT) featuring 1 NPN and 1 PNP configuration in a compact 6-TSSOP package. It supports a collector-emitter voltage of 50V for NPN and 40V for PNP, with a maximum output current of 100mA for NPN and 500mA for PNP. The device operates at a frequency of up to 300MHz and has a total power dissipation of 300mW, making it suitable for low drive power applications.
The PBLS4002Y,115 is a pre-biased bipolar transistor (BJT) featuring 1 NPN and 1 PNP configuration in a compact 6-TSSOP package. It supports a collector-emitter voltage of 50V for NPN and 40V for PNP, with a maximum output current of 100mA for NPN and 500mA for PNP. The device operates at a frequency of up to 300MHz and has a total power dissipation of 300mW, making it suitable for low drive power applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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