PBLS2022D,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PREBIAS 1PNP 1PNP 6TSOP
TRANS PREBIAS 1PNP 1PNP 6TSOP
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 20V 100mA, 1.8A 130MHz 760mW Surface Mount 6-TSOP
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 PNP 50V, 20V 100mA, 1.8A 130MHz 760mW Surface Mount 6-TSOP
Description
Description
The PBLS2022D,115 is a pre-biased PNP bipolar transistor designed for low VCEsat applications. It features a collector-emitter voltage of -20V, a collector current of -1.8A, and a peak collector current of -3A. This surface-mounted device operates at a frequency of 130MHz and has a power dissipation of 760mW, making it suitable for various switching applications in compact designs.
The PBLS2022D,115 is a pre-biased PNP bipolar transistor designed for low VCEsat applications. It features a collector-emitter voltage of -20V, a collector current of -1.8A, and a peak collector current of -3A. This surface-mounted device operates at a frequency of 130MHz and has a power dissipation of 760mW, making it suitable for various switching applications in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Jan-Erik or one of our other skilled sales representatives. They'll help you find the right service option.C