PBLS1503Y,115
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA PBLS1503Y - SMALL SIGNA
NEXPERIA PBLS1503Y - SMALL SIGNA
Detailed specification
Detailed specification
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW surface-mounted 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW surface-mounted 6-TSSOP
Description
Description
The NXP Semiconductors PBLS1503Y is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a compact 6-TSSOP package. It operates at a collector-emitter voltage of 50V for NPN and -15V for PNP, with a maximum collector current of 500mA. The device offers low VCEsat and is suitable for applications requiring low drive power and space-saving solutions.
The NXP Semiconductors PBLS1503Y is a pre-biased bipolar transistor (BJT) featuring one NPN and one PNP transistor in a compact 6-TSSOP package. It operates at a collector-emitter voltage of 50V for NPN and -15V for PNP, with a maximum collector current of 500mA. The device offers low VCEsat and is suitable for applications requiring low drive power and space-saving solutions.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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