PBHV8540T-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
PBHV8540T-Q/SOT23/TO-236AB
PBHV8540T-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV8540T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 400 V, a collector current of 500 mA, and a transition frequency of 30 MHz. This device is suitable for automotive and industrial applications, providing low VCEsat and high current gain.
The PBHV8540T-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a collector-emitter voltage of 400 V, a collector current of 500 mA, and a transition frequency of 30 MHz. This device is suitable for automotive and industrial applications, providing low VCEsat and high current gain.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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