PBHV8540T,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 400V 0.5A TO236AB
TRANS NPN 400V 0.5A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 400 V 500 mA 30MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV8540T is a high-voltage NPN bipolar transistor designed for applications requiring up to 400 V and 0.5 A. It features low collector-emitter saturation voltage (VCEsat), high current gain (hFE), and operates at frequencies up to 30 MHz. Packaged in a compact TO-236AB surface mount configuration, it is suitable for various electronic applications.
The PBHV8540T is a high-voltage NPN bipolar transistor designed for applications requiring up to 400 V and 0.5 A. It features low collector-emitter saturation voltage (VCEsat), high current gain (hFE), and operates at frequencies up to 30 MHz. Packaged in a compact TO-236AB surface mount configuration, it is suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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