PBHV8515QAZ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 150V 0.5A DFN1010D-3
TRANS NPN 150V 0.5A DFN1010D-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 150 V 500 mA 75 MHz 325 mW surface-mounted DFN1010D-3
Bipolar (BJT) Transistor NPN 150 V 500 mA 75 MHz 325 mW surface-mounted DFN1010D-3
Description
Description
The PBHV8515QAZ is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a collector-emitter voltage of 150 V and a collector current of 500 mA, with a transition frequency of 75 MHz. Packaged in a DFN1010D-3 surface mount configuration, it features a low profile of 0.37 mm, making it suitable for compact designs.
The PBHV8515QAZ is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a collector-emitter voltage of 150 V and a collector current of 500 mA, with a transition frequency of 75 MHz. Packaged in a DFN1010D-3 surface mount configuration, it features a low profile of 0.37 mm, making it suitable for compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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