PBHV8215Z,115
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 150V 2A SOT223
TRANS NPN 150V 2A SOT223
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 150 V 2 A 33MHz 1.45 W surface-mounted SOT-223
Bipolar (BJT) Transistor NPN 150 V 2 A 33MHz 1.45 W surface-mounted SOT-223
Description
Description
The PBHV8215Z is a high-voltage NPN bipolar transistor designed for applications requiring up to 150 V and 2 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. The device operates at a frequency of 33 MHz and is housed in a SOT-223 surface-mounted package, making it suitable for compact designs.
The PBHV8215Z is a high-voltage NPN bipolar transistor designed for applications requiring up to 150 V and 2 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. The device operates at a frequency of 33 MHz and is housed in a SOT-223 surface-mounted package, making it suitable for compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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