PBHV8118T,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 180V 1A TO236AB
TRANS NPN 180V 1A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 180 V 1 A 30MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 180 V 1 A 30MHz 300 mW surface-mounted TO-236AB
Description
Description
The PBHV8118T is a high-voltage NPN bipolar transistor designed for applications requiring up to 180 V and 1 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. This surface-mounted device (SMD) is suitable for LED drivers, automotive power management, and switch mode power supplies.
The PBHV8118T is a high-voltage NPN bipolar transistor designed for applications requiring up to 180 V and 1 A. It features low collector-emitter saturation voltage (VCEsat) and high current gain (hFE) at elevated collector currents. This surface-mounted device (SMD) is suitable for LED drivers, automotive power management, and switch mode power supplies.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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