PBHV8115T,215
Manufacturer
NXP
Data sheet
Data sheet
Specification
Specification
NEXPERIA PBHV8115T - 150 V, 1 A
NEXPERIA PBHV8115T - 150 V, 1 A
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 150 V 1 A 30 MHz 300 mW surface-mounted TO-236AB
Description
Description
The NEXPERIA PBHV8115T is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a maximum collector-emitter voltage of 150 V and a collector current of 1 A, with a transition frequency of 30 MHz. Packaged in a compact SOT23 (TO-236AB) surface-mounted device, it is suitable for LED drivers, LCD backlighting, and automotive motor management.
The NEXPERIA PBHV8115T is a high-voltage NPN bipolar transistor designed for applications requiring low VCEsat. It operates at a maximum collector-emitter voltage of 150 V and a collector current of 1 A, with a transition frequency of 30 MHz. Packaged in a compact SOT23 (TO-236AB) surface-mounted device, it is suitable for LED drivers, LCD backlighting, and automotive motor management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C