NXPSC12650B6J
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE SIL CARBIDE 650V 12A D2PAK
DIODE SIL CARBIDE 650V 12A D2PAK
Detailed specification
Detailed specification
Diode 650 V 12A surface-mounted D2PAK
Diode 650 V 12A surface-mounted D2PAK
Description
Description
The NXPSC12650B is a Silicon Carbide Schottky diode designed for high-frequency switched-mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 12 A. The diode is housed in a D2PAK package, ensuring high efficiency and reduced losses compared to traditional silicon diodes. It offers excellent thermal performance with a thermal resistance from junction to mounting base of 1.1 K/W, making it suitable for demanding applications.
The NXPSC12650B is a Silicon Carbide Schottky diode designed for high-frequency switched-mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 12 A. The diode is housed in a D2PAK package, ensuring high efficiency and reduced losses compared to traditional silicon diodes. It offers excellent thermal performance with a thermal resistance from junction to mounting base of 1.1 K/W, making it suitable for demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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