NXPSC10650D6J
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE SIL CARBIDE 650V 10A DPAK
DIODE SIL CARBIDE 650V 10A DPAK
Detailed specification
Detailed specification
Diode 650 V 10A surface-mounted DPAK
Diode 650 V 10A surface-mounted DPAK
Description
Description
The NXPSC10650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 10 A, housed in a DPAK package. This diode offers high efficiency, fast reverse recovery, and reduced EMI, making it suitable for various applications.
The NXPSC10650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 10 A, housed in a DPAK package. This diode offers high efficiency, fast reverse recovery, and reduced EMI, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gustaf or one of our other skilled sales representatives. They'll help you find the right service option.C