NXPSC08650D6J
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE SIL CARBIDE 650V 8A DPAK
DIODE SIL CARBIDE 650V 8A DPAK
Detailed specification
Detailed specification
Diode 650 V 8A surface-mounted DPAK
Diode 650 V 8A surface-mounted DPAK
Description
Description
The NXPSC08650D is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 8 A. The device is housed in a DPAK package, offering high efficiency, reduced losses, and fast reverse recovery time, making it superior to traditional silicon diodes.
The NXPSC08650D is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 8 A. The device is housed in a DPAK package, offering high efficiency, reduced losses, and fast reverse recovery time, making it superior to traditional silicon diodes.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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