NXPSC04650X6Q
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE SIL CARBIDE 650V 4A TO220F
DIODE SIL CARBIDE 650V 4A TO220F
Detailed specification
Detailed specification
Diode 650 V 4A Through Hole TO-220F
Diode 650 V 4A Through Hole TO-220F
Description
Description
The NXPSC04650X is a Silicon Carbide Schottky diode rated for 650 V and 4 A, housed in a TO-220F-2L package. It offers high efficiency, fast switching performance, and reduced EMI, making it ideal for high-frequency switched-mode power supplies. The diode features a forward voltage drop of 1.5 to 2.1 V and an isolation voltage of 2500 V RMS, ensuring reliable operation in demanding applications.
The NXPSC04650X is a Silicon Carbide Schottky diode rated for 650 V and 4 A, housed in a TO-220F-2L package. It offers high efficiency, fast switching performance, and reduced EMI, making it ideal for high-frequency switched-mode power supplies. The diode features a forward voltage drop of 1.5 to 2.1 V and an isolation voltage of 2500 V RMS, ensuring reliable operation in demanding applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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